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SI6475DQ 数据表(PDF) 2 Page - Vishay Siliconix |
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SI6475DQ 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Si6475DQ Vishay Siliconix New Product www.vishay.com 2 Document Number: 71294 S-01889—Rev. A, 28-Aug-00 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = –5 mA –0.45 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = –9.6 V, VGS = 0 V –1 mA Zero Gate Voltage Drain Current IDSS VDS = –9.6 V, VGS = 0 V, TJ = 70_C –10 mA On-State Drain Currenta ID(on) VDS = –5 V, VGS = –4.5 V 20 A DiS OS R i a VGS = –4.5 V, ID = –10 A 0.009 0.011 W Drain-Source On-State Resistancea rDS(on) VGS = –2.5 V, ID = –9 A 0.011 0.0135 W VGS = –1.8 V, ID = –8 A 0.014 0.017 W Forward Transconductancea gfs VDS = –15 V, ID = –10 A 50 S Diode Forward Voltagea VSD IS = –1.5 A, VGS = 0 V –0.68 –1.1 V Dynamicb Total Gate Charge Qg V 6 V V 4 5 V I 10 A 49.5 70 C Gate-Source Charge Qgs VDS = –6 V, VGS = –4.5 V, ID = –10 A 7.7 nC Gate-Drain Charge Qgd 8.5 Turn-On Delay Time td(on) V6 V R 6 W 56 85 Rise Time tr VDD = –6 V, RL = 6 W I1 A V 4 5 V R 6 W 62 100 Turn-Off Delay Time td(off) DD , L ID ^ –1 A, VGEN = –4.5 V, RG = 6 W 300 450 ns Fall Time tf 185 270 Source-Drain Reverse Recovery Time trr IF = –1.5 A, di/dt = 100 A/ms 90 150 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 6 12 18 24 30 0 0.5 1.0 1.5 2.0 0 6 12 18 24 30 02468 10 VGS = 5 thru 2 V TC = 125_C –55 _C 25 _C Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) 1.5 V 1 V |
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