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SI6463BDQ 数据表(PDF) 1 Page - Vishay Siliconix

部件名 SI6463BDQ
功能描述  P-Channel 1.8-V (G-S) MOSFET
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SI6463BDQ 数据表(HTML) 1 Page - Vishay Siliconix

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Si6463BDQ
Vishay Siliconix
New Product
Document Number: 72018
S-21782—Rev. A, 07-Oct-02
www.vishay.com
1
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.015 @ VGS = -4.5 V
-7.4
-20
0.020 @ VGS = -2.5 V
- 6.3
0.027 @ VGS = -1.8 V
- 5.5
Si6463BDQ
D
S
S
G
1
2
3
4
8
7
6
5
D
S
S
D
TSSOP-8
Top View
D
S*
G
D
P-Channel MOSFET
* Source Pins 2, 3, 6 and 7
must be tied common.
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
"8
V
_
TA = 25_C
- 7.4
-6.2
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
-5.9
4.9
Pulsed Drain Current (10
ms Pulse Width)
IDM
-30
A
Continuous Source Current (Diode Conduction)a
IS
-1.35
-0.95
TA = 25_C
1.5
1.05
Maximum Power Dissipationa
TA = 70_C
PD
1.0
0.67
W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
v 10 sec
65
83
Maximum Junction-to-Ambienta
Steady State
RthJA
100
120
_C/W
Maximum Junction-to-Foot
Steady State
RthJF
46
56
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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