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SI6463BDQ 数据表(PDF) 1 Page - Vishay Siliconix |
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SI6463BDQ 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Si6463BDQ Vishay Siliconix New Product Document Number: 72018 S-21782—Rev. A, 07-Oct-02 www.vishay.com 1 P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.015 @ VGS = -4.5 V -7.4 -20 0.020 @ VGS = -2.5 V - 6.3 0.027 @ VGS = -1.8 V - 5.5 Si6463BDQ D S S G 1 2 3 4 8 7 6 5 D S S D TSSOP-8 Top View D S* G D P-Channel MOSFET * Source Pins 2, 3, 6 and 7 must be tied common. ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS "8 V _ TA = 25_C - 7.4 -6.2 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID -5.9 4.9 Pulsed Drain Current (10 ms Pulse Width) IDM -30 A Continuous Source Current (Diode Conduction)a IS -1.35 -0.95 TA = 25_C 1.5 1.05 Maximum Power Dissipationa TA = 70_C PD 1.0 0.67 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t v 10 sec 65 83 Maximum Junction-to-Ambienta Steady State RthJA 100 120 _C/W Maximum Junction-to-Foot Steady State RthJF 46 56 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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