SI3588DV datasheet(1/7 Pages) VISHAY

部件名	SI3588DV

功能描述	N- and P-Channel 20-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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Si3588DV

Vishay Siliconix

New Product

Document Number: 71332

S-02383—Rev. A, 23-Oct-00

www.vishay.com

1

N- and P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

0.080 @ VGS = 4.5 V

3.0

N-Channel

20

0.100 @ VGS = 2.5 V

2.6

0.128 @ VGS = 1.8 V

2.3

0.145 @ VGS = –4.5 V

–2.2

P-Channel

–20

0.200 @ VGS = –2.5 V

–1.8

0.300 @ VGS = –1.8 V

–1.5

D1

G1

S1

N-Channel MOSFET

S2

G2

D2

P-Channel MOSFET

TSOP-6

Top View

6

4

1

2

3

5

2.85 mm

3 mm

D2

G2

S1

S2

D1

G1

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

N-Channel

P-Channel

Parameter

Symbol

5 secs

Steady State

5 secs

Steady State

Unit

Drain-Source Voltage

VDS

20

–20

Gate-Source Voltage

VGS

"8

V

_

TA = 25_C

3.0

2.5

–2.2

–0.57

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

2.3

2.0

–1.8

–1.5

Pulsed Drain Current

IDM

"8

A

Continuous Source Current (Diode Conduction)a

IS

1.05

0.75

–1.05

–0.75

TA = 25_C

1.15

0.83

1.15

0.083

Maximum Power Dissipationa

TA = 70_C

PD

0.73

0.53

0.73

0.53

W

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

v 5 sec

93

110

Maximum Junction-to-Ambienta

Steady State

RthJA

130

150

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

90

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

类似零件编号 - SI3588DV

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI3588DV	221Kb / 12P	N- and P-Channel 20-V (D-S) MOSFET Rev. B, 02-Nov-09
	SI3588DV	127Kb / 8P	N- and P-Channel 20-V (D-S) MOSFET 01-Jan-2022
	SI3588DV-T1-E3	221Kb / 12P	N- and P-Channel 20-V (D-S) MOSFET Rev. B, 02-Nov-09
	SI3588DV-T1-GE3	221Kb / 12P	N- and P-Channel 20-V (D-S) MOSFET Rev. B, 02-Nov-09
VBsemi Electronics Co.,...	SI3588DV-T1-GE3	598Kb / 10P	N- and P-Channel 20V (D-S) MOSFET

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类似说明 - SI3588DV

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