STFI13N80K5 datasheet(5/13 Pages) STMICROELECTRONICS

部件名	STFI13N80K5

功能描述	N-channel 800 V, 0.37 ??typ.,12 A MDmesh??K5 Power MOSFET in an I짼PAKFP package

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 13 page

DocID027200 Rev 2

5/13

STFI13N80K5

Electrical characteristics

The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD

capability of the device. The Zener voltage is appropriate for efficient and cost-effective

intervention to protect the device integrity. These integrated Zener diodes thus eliminate the

need for external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 400 V, ID = 6A,

RG=4.7 Ω, VGS=10 V

(see Figure 18)

-16-

ns

tr

Rise time

-

16

-

ns

td(off)

Turn-off delay time

-

42

-

ns

tf

Fall time

-

16

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

14

A

ISDM

Source-drain current (pulsed)

-

56

A

VSD

(1)

1.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

VGS=0, ISD= 12 A

-

1.5

V

trr

Reverse recovery time

ISD= 12 A, VDD= 60 V

di/dt = 100 A/µs,

(see Figure 17)

-

406

ns

Qrr

Reverse recovery charge

-

5.7

µC

IRRM

Reverse recovery current

-

28

A

trr

Reverse recovery time

ISD= 12 A,VDD= 60 V

di/dt=100 A/µs,

Tj=150 °C

(see Figure 17)

-

600

ns

Qrr

Reverse recovery charge

-

7.9

µC

IRRM

Reverse recovery current

-

26

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO Gate-source breakdown voltage IGS= ± 1mA, ID= 0

30

-

V

类似零件编号 - STFI13N80K5

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制造商	部件名	数据表	功能描述
STMicroelectronics	STFI7LN80K5	699Kb / 12P	N-channel 800 V, 0.95 廓 typ., 5 A MDmesh??K5 Power MOSFET in a I짼PAKFP package December 2015 Rev 1
	STFI10LN80K5	628Kb / 13P	N-channel 800 V, 0.55 廓 typ., 8 A MDmesh??K5 Power MOSFET in a I짼PAKFP package February 2016
	STFI5N80K5	723Kb / 12P	N-channel 800 V, 1.50 廓 typ., 4 A MDmesh??K5 Power MOSFET in a I짼PAKFP package May 2016
	STFI15N95K5	754Kb / 13P	N-channel 950 V, 0.41 廓 typ., 12 A MDmesh??K5 Power MOSFET in a I짼PAKFP package July 2016 Rev 1
	STFU13N80K5	754Kb / 13P	N-channel 800 V, 0.37 廓 typ., 12 A MDmesh??K5 Power MOSFET in a TO-220FP ultra narrow leads package October 2015 Rev 1
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	STP10LN80K5	741Kb / 14P	N-channel 800 V, 0.55 typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package
	STB5N80K5	904Kb / 15P	N-channel 800 V, 1.50 (ohm) typ., 4 A MDmesh K5 Power MOSFET in a DPAK package

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