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STB85NS04Z-1 数据表(PDF) 3 Page - STMicroelectronics

部件名 STB85NS04Z-1
功能描述  Low capacitance and gate charge
Download  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB85NS04Z-1 数据表(HTML) 3 Page - STMicroelectronics

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STB85NS04Z - STB85NS04Z-1
Electrical ratings
3/15
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS=0)
33 (1)
1.
Voltage is limited by zener diodes
V
VGS
Gate-source voltage
± 18
V
ID
Drain current (continuous) at TC = 25°C
80 (2)
2.
Current limited by wire bonding
A
ID
Drain current (continuous) at TC = 100°C
60
A
IDG
Drain gate current (continuous)
± 50
mA
IGS
Gate source current (continuous)
± 50
mA
IDM
(3)
3.
Pulse width limited by safe operating area
Drain current (pulsed)
320
A
Derating factor
1.43
W/°C
PTOT
Total dissipation at TC = 25°C
215
W
VESD(G-S)
Gate-source ESD (HBM-C=100pF, R=1.5k
Ω)2
kV
VESD(G-D)
Gate-drain ESD (HBM-C=100pF, R=1.5k
Ω)4
kV
VESD(D-S)
Drain-source ESD (HBM-C=100pF, R=1.5k
Ω)4
kV
Tj
Operating junction temperature
-55 to 175
°C
Tstg
Storage temperature
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
D²PAK
I²PAK
Rthj-case
Thermal resistance junction-case max
0.7
°C/W
Rthj-pcb (1)
1.
When mounted on 1inch² FR-4 board, 2 oz Cu
Thermal resistance junction-pcb max
35
--
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
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