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STF15N95K5 数据表(PDF) 5 Page - STMicroelectronics

部件名 STF15N95K5
功能描述  Ultra low gate charge
Download  18 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STF15N95K5 数据表(HTML) 5 Page - STMicroelectronics

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STF15N95K5, STP15N95K5, STW15N95K5
Electrical characteristics
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(v)
Voltage delay time
V
DD
= 475 V, I
D
= 6 A,
R
G
=4.7
Ω, V
GS
=10 V
(see Figure 22)
-23-
ns
t
r(v)
Voltage rise time
-
20
-
ns
t
f(i)
Current fall time
-
62
-
ns
t
c(off)
Crossing time
-
11
-
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Source-drain current
Source-drain current (pulsed)
-
12
48
A
A
V
SD
(1)
1.
Pulsed: pulse duration = 300μs, duty cycle 1.5%
Forward on voltage
I
SD
= 12 A, V
GS
=0
-
1.5
V
t
rr
Reverse recovery time
I
SD
= 12 A, V
DD
= 60 V
di/dt = 100 A/μs,
(see Figure 21)
-
444
ns
Q
rr
Reverse recovery charge
-
7
μC
I
RRM
Reverse recovery current
-
32
A
t
rr
Reverse recovery time
I
SD
= 12 A,V
DD
= 60 V
di/dt=100 A/μs,
Tj=150 °C
(see
Figure 21)
-
630
ns
Q
rr
Reverse recovery charge
-
9.2
μC
I
RRM
Reverse recovery current
-
29
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)GSO
Gate-source breakdown voltage
I
GS
= ± 1 mA, I
D
= 0
30
-
-
V


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