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STF11N65M2 数据表(PDF) 4 Page - STMicroelectronics |
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STF11N65M2 数据表(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STF11N65M2, STFI11N65M2 4/15 DocID025806 Rev 2 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 650 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 650 V 1 µA VGS = 0 V, VDS = 650 V, Tcase = 125 °C 100 IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 3.5 A 0.6 0.68 Ω Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 410 - pF Coss Output capacitance - 20 - Crss Reverse transfer capacitance - 0.95 - Coss eq.(1) Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 V - 83 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 6.4 - Ω Qg Total gate charge VDD = 520 V, ID = 7 A, VGS = 10 V (see Figure 15: "Test circuit for gate charge behavior") - 12.5 - nC Qgs Gate-source charge - 3.2 - Qgd Gate-drain charge - 5.8 - Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 325 V, ID = 3.5 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform") - 9.5 - ns tr Rise time - 7.5 - td(off) Turn-off delay time - 26 - tf Fall time - 15 - |
类似零件编号 - STF11N65M2 |
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类似说明 - STF11N65M2 |
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