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STF11N65M2 数据表(PDF) 4 Page - STMicroelectronics

部件名 STF11N65M2
功能描述  Extremely low gate charge
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STF11N65M2 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STF11N65M2, STFI11N65M2
4/15
DocID025806 Rev 2
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
650
V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 650 V
1
µA
VGS = 0 V, VDS = 650 V,
Tcase = 125 °C
100
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ±25 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 3.5 A
0.6
0.68
Ω
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
-
410
-
pF
Coss
Output capacitance
-
20
-
Crss
Reverse transfer
capacitance
-
0.95
-
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 to 520 V, VGS = 0 V
-
83
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
6.4
-
Ω
Qg
Total gate charge
VDD = 520 V, ID = 7 A,
VGS = 10 V (see Figure 15:
"Test circuit for gate charge
behavior")
-
12.5
-
nC
Qgs
Gate-source charge
-
3.2
-
Qgd
Gate-drain charge
-
5.8
-
Notes:
(1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 325 V, ID = 3.5 A
RG = 4.7
Ω, VGS = 10 V (see
Figure 14: "Test circuit for
resistive load switching times"
and Figure 19: "Switching time
waveform")
-
9.5
-
ns
tr
Rise time
-
7.5
-
td(off)
Turn-off delay time
-
26
-
tf
Fall time
-
15
-


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