数据搜索系统,热门电子元器件搜索 |
|
STF11N65M2 数据表(PDF) 3 Page - STMicroelectronics |
|
STF11N65M2 数据表(HTML) 3 Page - STMicroelectronics |
3 / 15 page STF11N65M2, STFI11N65M2 Electrical ratings DocID025806 Rev 2 3/15 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±25 V ID(1) Drain current (continuous) at Tcase = 25 °C 7 A Drain current (continuous) at Tcase = 100 °C 4.4 IDM(2) Drain current (pulsed) 28 A PTOT Total dissipation at Tcase = 25 °C 25 W dv/dt(3)(4) Peak diode recovery voltage slope 15 V/ns dv/dt(5) MOSFET dv/dt ruggedness 50 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) 2500 V Tstg Storage temperature -55 to 150 °C Tj Operating junction temperature Notes: (1) The value is rated according to Rthj-case and limited by package. (2) Pulse width limited by Tjmax. (3) starting Tj = 25 °C, ID = IAS, VDD = 50 V. (4) ISD ≤ 7 A, di/dt=400 A/μs, VDS peak < V(BR)DSS VDD = 80% V(BR)DSS. (5) VDS ≤ 520 V. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 5 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR(1) Avalanche current, repetitive or not repetitive 1.5 A EAS(2) Single pulse avalanche energy 110 mJ Notes: (1) Pulse width limited by Tjmax. (2) starting Tj = 25 °C, ID = IAR, VDD = 50 V. |
类似零件编号 - STF11N65M2 |
|
类似说明 - STF11N65M2 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |