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STD36P4LLF6 数据表(PDF) 5 Page - STMicroelectronics |
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STD36P4LLF6 数据表(HTML) 5 Page - STMicroelectronics |
5 / 16 page STD36P4LLF6 Electrical characteristics DocID025616 Rev 2 5/16 Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD (1) Forward on voltage VGS = 0 V, ISD = 18 A - 1.1 V trr Reverse recovery time ISD = 36 A, di/dt = 100 A/µs, VDD = 32 V, Tj = 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 26 ns Qrr Reverse recovery charge - 21 nC IRRM Reverse recovery current - 1.7 A Notes: (1) Pulse test: pulse duration = 300 µs, duty cycle 1.5% For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. |
类似零件编号 - STD36P4LLF6 |
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类似说明 - STD36P4LLF6 |
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