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STD16N65M2 数据表(PDF) 5 Page - STMicroelectronics |
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STD16N65M2 数据表(HTML) 5 Page - STMicroelectronics |
5 / 17 page DocID027076 Rev 1 5/17 STD16N65M2 Electrical characteristics 17 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 325 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14 and 19) - 11.3 - ns tr Rise time - 8.2 - ns td(off) Turn-off delay time - 36 - ns tf Fall time - 11.3 - ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 11 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 44 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage VGS = 0, ISD = 11 A - 1.6 V trr Reverse recovery time ISD = 11 A, di/dt = 100 A/µs VDD = 60 V (see Figure 16) -342 ns Qrr Reverse recovery charge - 3.5 µC IRRM Reverse recovery current - 20.4 A trr Reverse recovery time ISD = 11 A, di/dt = 100 A/µs VDD = 60 V, Tj=150 °C (see Figure 16) -458 ns Qrr Reverse recovery charge - 4.6 µC IRRM Reverse recovery current - 20.5 A |
类似零件编号 - STD16N65M2 |
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类似说明 - STD16N65M2 |
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