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STU3N80K5 数据表(PDF) 4 Page - STMicroelectronics

部件名 STU3N80K5
功能描述  N-channel 800 V, 2.8typ., 2.5 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STU3N80K5 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5
4/23
DocID025000 Rev 3
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified).
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage (V
GS
= 0)
I
D
= 1 mA
800
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 800 V
1
μA
V
DS
= 800 V T
j
=125 °C
50
μA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ± 20 V
±10
μA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100 μA3
4
5
V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 1 A
2.8
3.5
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
V
DS
=100 V, f=1 MHz, V
GS
=0
-
130
-
pF
C
oss
Output capacitance
-
14
-
pF
C
rss
Reverse transfer
capacitance
-0.6
-
pF
C
o(tr)
(1)
1.
Time related is defined as a constant equivalent capacitance giving the same charging time as C
oss
when
V
DS
increases from 0 to 80% V
DSS
Equivalent capacitance time
related
V
GS
= 0, V
DS
= 0
-20
-
pF
C
o(er)
(2)
2.
Energy related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent capacitance
energy related
-9
-
pF
R
G
Intrinsic gate resistance
f = 1 MHz, I
D
=0
-
15.5
-
Ω
Q
g
Total gate charge
V
DD
= 640 V, I
D
= 2.5 A
V
GS
=10 V
-9.5
-
nC
Q
gs
Gate-source charge
-
1.5
-
nC
Q
gd
Gate-drain charge
-
7.5
-
nC


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