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STU3N80K5 数据表(PDF) 4 Page - STMicroelectronics |
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STU3N80K5 数据表(HTML) 4 Page - STMicroelectronics |
4 / 23 page Electrical characteristics STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5 4/23 DocID025000 Rev 3 2 Electrical characteristics (T CASE = 25 °C unless otherwise specified). Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS Drain-source breakdown voltage (V GS = 0) I D = 1 mA 800 V I DSS Zero gate voltage drain current (V GS = 0) V DS = 800 V 1 μA V DS = 800 V T j =125 °C 50 μA I GSS Gate body leakage current (V DS = 0) V GS = ± 20 V ±10 μA V GS(th) Gate threshold voltage V DS = V GS , I D = 100 μA3 4 5 V R DS(on) Static drain-source on- resistance V GS = 10 V, I D = 1 A 2.8 3.5 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance V DS =100 V, f=1 MHz, V GS =0 - 130 - pF C oss Output capacitance - 14 - pF C rss Reverse transfer capacitance -0.6 - pF C o(tr) (1) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS Equivalent capacitance time related V GS = 0, V DS = 0 -20 - pF C o(er) (2) 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V DS increases from 0 to 80% V DSS Equivalent capacitance energy related -9 - pF R G Intrinsic gate resistance f = 1 MHz, I D =0 - 15.5 - Ω Q g Total gate charge V DD = 640 V, I D = 2.5 A V GS =10 V -9.5 - nC Q gs Gate-source charge - 1.5 - nC Q gd Gate-drain charge - 7.5 - nC |
类似零件编号 - STU3N80K5 |
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类似说明 - STU3N80K5 |
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