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STF3N80K5 数据表(PDF) 5 Page - STMicroelectronics |
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STF3N80K5 数据表(HTML) 5 Page - STMicroelectronics |
5 / 23 page DocID025000 Rev 3 5/23 STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5 Electrical characteristics The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time V DD = 400 V, I D = 1.25 A, R G =4.7 Ω, V GS =10 V -8.5 - ns t r Rise time - 7.5 - ns t d(off) Turn-off delay time - 20.5 - ns t f Fall time - 25 - ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 2.5 A I SDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 10 A V SD (2) 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Forward on voltage I SD = 2.5 A, V GS =0 - 1.5 V t rr Reverse recovery time I SD = 2.5 A, V DD = 60 V di/dt = 100 A/μs, - 265 ns Q rr Reverse recovery charge - 1.2 μC I RRM Reverse recovery current - 9.2 A t rr Reverse recovery time I SD = 2.5 A,V DD = 60 V di/dt=100 A/μs, Tj=150 °C - 430 ns Q rr Reverse recovery charge - 1.9 μC I RRM Reverse recovery current - 8.8 A Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)GSO Gate-source breakdown voltage I GS = ± 1mA, I D = 0 30 - - V |
类似零件编号 - STF3N80K5 |
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类似说明 - STF3N80K5 |
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