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STF3N80K5 数据表(PDF) 5 Page - STMicroelectronics

部件名 STF3N80K5
功能描述  N-channel 800 V, 2.8typ., 2.5 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STF3N80K5 数据表(HTML) 5 Page - STMicroelectronics

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DocID025000 Rev 3
5/23
STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5
Electrical characteristics
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
V
DD
= 400 V, I
D
= 1.25
A, R
G
=4.7
Ω, V
GS
=10 V
-8.5
-
ns
t
r
Rise time
-
7.5
-
ns
t
d(off)
Turn-off delay time
-
20.5
-
ns
t
f
Fall time
-
25
-
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain current
-
2.5
A
I
SDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
-
10
A
V
SD
(2)
2.
Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage
I
SD
= 2.5 A, V
GS
=0
-
1.5
V
t
rr
Reverse recovery time
I
SD
= 2.5 A, V
DD
= 60 V
di/dt = 100 A/μs,
-
265
ns
Q
rr
Reverse recovery charge
-
1.2
μC
I
RRM
Reverse recovery current
-
9.2
A
t
rr
Reverse recovery time
I
SD
= 2.5 A,V
DD
= 60 V
di/dt=100 A/μs,
Tj=150 °C
-
430
ns
Q
rr
Reverse recovery charge
-
1.9
μC
I
RRM
Reverse recovery current
-
8.8
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)GSO
Gate-source breakdown voltage
I
GS
= ± 1mA, I
D
= 0
30
-
-
V


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