STD1HN60K3 datasheet(7/19 Pages) STMICROELECTRONICS

部件名	STD1HN60K3

功能描述	N-channel 600 V, 6.7 廓 typ., 1.2 A SuperMESH3??Power MOSFET in DPAK and IPAK packages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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7 / 19 page

DocID024422 Rev 1

7/19

STD1HN60K3, STU1HN60K3

Electrical characteristics

Figure 8. Gate charge vs gate-source voltage

Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage vs

temperature

Figure 11. Normalized on-resistance vs

temperature

Figure 12.

Source-drain diode forward

characteristics

Figure 13.

Output capacitance stored energy

VDS

VGS

6

4

2

0

Qg(nC)

(V)

4

8

2

10

VDS=480V

ID=1.2A

300

200

100

0

400

VDS

6

8

500

VDS

(V)

AM15652v1

C

100

10

1

0.1

10

VDS(V)

(pF)

1

100

Ciss

Coss

Crss

AM15653v1

VGS(th)

1.00

0.90

0.80

0.70

-75

TJ(°C)

(norm)

-50

1.10

75

-25

125

ID=50µA

0

25 50

100

AM15654v1

RDS(on)

2.0

1.5

1.0

0.5

TJ(°C)

(norm)

2.5

0

-75 -50

75

-25

125

0

25 50

100

ID=0.6 A

VGS=10 A

AM15655v1

VSD

0.6

0.8

ISD(A)

(V)

0.7

1.1

0.9

1

0.50

0.55

0.60

0.65

0.70

0.75

0.80

TJ=-50°C

TJ=150°C

TJ=25°C

0.85

0.90

0.95

1.2

AM15656v1

Eoss

0

VDS(V)

(µJ)

400

200

600

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

AM15657v1

类似零件编号 - STD1HN60K3

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	STD1HN60K3	1Mb / 9P	N-Channel 650 V (D-S) MOSFET

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类似说明 - STD1HN60K3

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