STF26NM60ND datasheet(6/23 Pages) STMICROELECTRONICS

部件名	STF26NM60ND

功能描述	Low input capacitance and gate charge

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND

6/23

DocID025283 Rev 1

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

21

A

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

84

A

VSD

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Forward on voltage

ISD = 21 A, VGS = 0

-

1.6

V

trr

Reverse recovery time

ISD = 21 A, VDD = 60 V

di/dt=100 A/µs

(see Figure 20)

-

170

ns

Qrr

Reverse recovery charge

-

1.39

µC

IRRM

Reverse recovery current

-

14

A

trr

Reverse recovery time

ISD = 21 A,VDD = 60 V

di/dt=100 A/µs,

TJ = 150 °C

(see Figure 20)

-

230

ns

Qrr

Reverse recovery charge

-

2.24

µC

IRRM

Reverse recovery current

-

18

A

类似零件编号 - STF26NM60ND

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STMicroelectronics	STF26NM60N	1Mb / 23P	N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
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STF26NM60ND 数据表(PDF) 6 Page - STMicroelectronics

STF26NM60ND 数据表(HTML) 6 Page - STMicroelectronics

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STF26NM60ND 数据表(PDF) 6 Page - STMicroelectronics

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类似零件编号 - STF26NM60ND

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