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KTD1304 数据表(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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KTD1304 数据表(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 3 page Production specification NPN Silicon Epitaxial Planar Transistor KTD1304 C113 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 12 V Collector cut-off current ICBO VCB=25V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=12V,IC=0 0.1 μA DC current gain hFE VCE=2V,IC=4mA 200 800 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V Transition frequency fT VCE=10V, IC= 1mA 60 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 10 pF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
类似零件编号 - KTD1304_13 |
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类似说明 - KTD1304_13 |
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