KTD1304_13 datasheet(2/3 Pages) BILIN

部件名	KTD1304

功能描述	NPN Silicon Epitaxial Planar Transistor

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制造商	BILIN [Galaxy Semi-Conductor Holdings Limited]

网页	http://www.galaxycn.com

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2 / 3 page

Production specification

NPN Silicon Epitaxial Planar Transistor

KTD1304

C113

www.gmicroelec.com

Rev.A

2

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=100μA,IE=0

25

V

Collector-emitter breakdown voltage V(BR)CEO

IC=1mA,IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA,IC=0

12

V

Collector cut-off current

ICBO

VCB=25V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=12V,IC=0

0.1

μA

DC current gain

hFE

VCE=2V,IC=4mA

200

800

Collector-emitter saturation voltage

VCE(sat)

IC=100mA, IB=10mA

0.25

V

Base-emitter saturation voltage

VBE(sat)

IC=100mA, IB=10mA

1

V

Transition frequency

fT

VCE=10V, IC= 1mA

60

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

10

pF

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

类似零件编号 - KTD1304_13

制造商	部件名	数据表	功能描述
Guangdong Kexin Industr...	KTD1304	971Kb / 2P	NPN Transistors
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KEC(Korea Electronics)	KTD1304	359Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR

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类似说明 - KTD1304_13

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