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STB20N90K5 数据表(PDF) 3 Page - STMicroelectronics |
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STB20N90K5 数据表(HTML) 3 Page - STMicroelectronics |
3 / 15 page STB20N90K5 Electrical ratings DocID029147 Rev 3 3/15 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 20 A ID Drain current (continuous) at TC = 100 °C 13 A ID(1) Drain current (pulsed) 80 A PTOT Total dissipation at TC = 25 °C 250 W dv/dt (2) Peak diode recovery voltage slope 4.5 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 Tj Operating junction temperature range -55 to 150 °C Tstg Storage temperature range Notes: (1)Pulse width limited by safe operating area (2)ISD ≤ 20 A, di/dt ≤ 100 A/μs; VDS peak ≤ V(BR)DSS, VDD= 450 V (3)VDS ≤ 720 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.5 °C/W Rthj-pcb(1) Thermal resistance junction-pcb 30 °C/W Notes: (1) When mounted on a 1-inch² FR-4, 2 Oz copper board. Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 6.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 500 mJ |
类似零件编号 - STB20N90K5 |
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类似说明 - STB20N90K5 |
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