数据搜索系统,热门电子元器件搜索
Selected language     Chinese  ▼
部分名称
         详细搜索


IRF7104 Datasheet(数据表) 2 Page - International Rectifier

部件型号  IRF7104
说明  HEXFET Power MOSFET
下载  9 Pages
Scroll/Zoom Zoom In 100% Zoom Out
制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 

   
 2 page
background image
IRF7104
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20
–––
–––
V
VGS = 0V, ID = -250µA
∆V
(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
––– -0.015 –––
V/°C
Reference to 25°C, ID = -1mA
–––
0.19 0.25
VGS = -10V, ID = -1.0A
ƒ
–––
0.30 0.40
VGS = -4.5V, ID = -0.50A
ƒ
VGS(th)
Gate Threshold Voltage
-1.0
–––
-3.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
–––
2.5
–––
S
VDS = -15V, ID = -2.3A
ƒ
–––
–––
-2.0
VDS = -16V, VGS = 0V
–––
–––
-25
VDS = -16V, VGS = 0V, TJ = 55 °C
Gate-to-Source Forward Leakage
–––
–––
-100
VGS = -12V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 12V
Qg
Total Gate Charge
–––
9.3
25
ID = -2.3A
Qgs
Gate-to-Source Charge
–––
1.6
–––
nC
VDS = -10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
3.0
–––
VGS = -10V
ƒ
td(on)
Turn-On Delay Time
–––
12
40
VDD = -10V
tr
Rise Time
–––
16
40
ID = -1.0A
td(off)
Turn-Off Delay Time
–––
42
90
RG = 6.0
tf
Fall Time
–––
30
50
RD = 10Ω
ƒ
Between lead,6mm(0.25in.)
from package and center
of die contact
Ciss
Input Capacitance
–––
290
–––
VGS = 0V
Coss
Output Capacitance
–––
210
–––
pF
VDS = -15V
Crss
Reverse Transfer Capacitance
–––
67
–––
ƒ = 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.2
V
TJ = 25°C, IS = -1.25A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
69
100
ns
TJ = 25°C, IF = -1.25A
Qrr
Reverse RecoveryCharge
–––
90
140
nC
di/dt = 100A/µs
ƒ
ton
Forward Turn-On Time
Source-Drain Ratings and Characteristics
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
–––
-9.2
–––
–––
-2.0
A
IGSS
IDSS
Drain-to-Source Leakage Current
LS
Internal Source Inductance
–––
6.0
–––
LD
Internal Drain Inductance
–––
4.0
–––
nH
ns
nA
µA
RDS(ON)
Static Drain-to-Source On-Resistance
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ I
SD ≤ -2.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 10sec.
S
D
G
S
D
G




HTML 页

1  2  3  4  5  6  7  8  9 


数据表 下载



相关电子零件

部件型号部件说明Html View制造商
IRF7341HEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRLR2905HEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF7494HEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRL3303HEXFET POWER MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRL2703SHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFU330HEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRL3402HEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRLR3802HEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFI5210HEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier

链接网址

ALLDATASHEET是否为您带来帮助?  [ DONATE ]  

关于 Alldatasheet    |   广告服务   |   联系我们   |   隐私政策   |   书签   |   链接交换   |   制造商名单
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl