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NTMFS4834N 数据表(PDF) 3 Page - ON Semiconductor |
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NTMFS4834N 数据表(HTML) 3 Page - ON Semiconductor |
3 / 6 page NTMFS4834N http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Unit Max Typ Min Test Condition Symbol DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 30 A TJ = 25°C 0.77 1.2 V TJ = 125°C 0.70 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 34 ns Charge Time ta 18 Discharge Time tb 16 Reverse Recovery Charge QRR 25.9 nC PACKAGE PARASITIC VALUES Source Inductance LS TA = 25°C 0.65 nH Drain Inductance LD 0.005 nH Gate Inductance LG 1.84 nH Gate Resistance RG 1.4 W 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. |
类似零件编号 - NTMFS4834N |
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类似说明 - NTMFS4834N |
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