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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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EMX18 Datasheet(数据表) 2 Page - Rohm |
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EMX18 Datasheet(HTML) 2 Page - Rohm |
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2 page 
EMX18 / UMX18N Transistors Electrical characteristics (Ta=25 °C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) Cob Min. 15 12 6 − − 270 − − − − − − − − 90 7.5 − − − 0.1 0.1 680 250 − VIC =10 µA IC =1mA IE =10 µA VCB =15V VEB =6V VCE =2V, IC=10mA IC/IB =200mA/10mA V V µA µA − mV PF Typ. Max. Unit Conditions fT − 320 − VCE =2V, IE= −10mA, f=100MHz VCB =10V, IE=0A, f=1MHz MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Collector-emitter saturation voltage Output capacitance Packaging specifications Package Code TN 3000 Taping Basic ordering unit (pieces) UMX18N T2R 8000 EMX18 Type Electrical characteristic curves 0 1 10 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics 100 0.5 1.0 1.5 VCE = 2V 1000 2 5 20 50 200 500 1 2 5 10 20 50 100 200 500 COLLECTOR CURRENT : IC (mA) Fig.2 DC current gain vs. collector current 10 1000 20 50 100 200 500 1000 Ta = 125 °C 5 2 1 VCE = 2V 25 °C -40 °C 1 2 5 10 20 50 100 200 IC/IB = 20 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) Ta = 125 °C 500 1000 25 °C -40 °C |
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