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BC807W 数据表(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BC807W 数据表(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 5 page Production specification PNP Silicon Epitaxial Planar Transistor BC807W F044 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -0.1 μA VCB=-20V,IE=0,TA=150℃ -50 μA Emitter cut-off current IEBO VEB=-4V,IB=0 -0.1 μA DC current gain hFE VCE=-1V,IC=-100mA BC807-16W BC807-25W BC807-40W 100 160 250 160 250 350 250 400 600 VCE=-1V,IC=-300mA BC807-16W BC807-25W BC807-40W 60 100 170 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.7 V Base-emitter voltage VBE(sat) IC=-500mA, IB=-50mA -1.2 V Transition frequency fT VCE=-5V, IC=-50mA f=100MHz 200 MHz Collector-base capacitance Ccb VCB=-10V,f=1MHz 10 pF Emitter-base capacitance Ceb VEB=-0.5V,f=1MHz 60 pF |
类似零件编号 - BC807W |
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类似说明 - BC807W |
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