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SI8445DB 数据表(PDF) 5 Page - Vishay Siliconix |
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SI8445DB 数据表(HTML) 5 Page - Vishay Siliconix |
5 / 9 page Document Number: 69984 S-82768-Rev. C, 17-Nov-08 www.vishay.com 5 Vishay Siliconix Si8445DB TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ =150 °C 1 VSD -Source-to-Drain Voltage (V) 0.1 10 TJ =25 °C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient ID =1A 0.00 0.05 0.10 0.15 0.20 0.25 0 1 234 5 VGS - Gate-to-Source Voltage (V) TJ =25 °C TJ = 125 °C 0 5 10 15 20 25 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA =25 °C Single Pulse 1ms 10 ms DC Limited byRDS(on)* BVDSS Limited 100 µs 100 ms, 1 s 10 s |
类似零件编号 - SI8445DB |
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类似说明 - SI8445DB |
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