SI7159DN datasheet(1/7 Pages) VISHAY

部件名	SI7159DN

功能描述	P-Channel 30-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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Vishay Siliconix

Si7159DP

New Product

Document Number: 68872

S-82122-Rev. A, 08-Sep-08

www.vishay.com

1

P-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free

•TrenchFET® Power MOSFET

•

100% Rg Tested

•

100% UIS Tested

APPLICATIONS

•

Notebook Battery Charging

•

Notebook Adapter Switch

•

Load Switch

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

Qg (Typ.)

- 30

0.007 at VGS = - 10 V

- 30d

63 nC

0.0105 at VGS = - 4.5 V

- 30d

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 65 °C/W.

d. Package limited.

e. See Solder Profile

(http://www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 30

V

Gate-Source Voltage

VGS

± 25

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 30d

A

TC = 70 °C

- 30d

TA = 25 °C

- 20.7a, b

TA = 70 °C

- 16.4a, b

Pulsed Drain Current

IDM

- 60

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 30d

TA = 25 °C

- 4.5a, b

Avalanche Current

L = 0.1 mH

IAS

- 20

Single-Pulse Avalanche Energy

EAS

20

mJ

Maximum Power Dissipation

TC = 25 °C

PD

83

W

TC = 70 °C

53

TA = 25 °C

5.4a, b

TA = 70 °C

3.4a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)e, f

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, c

t

≤ 10 s

RthJA

18

33

°C/W

Maximum Junction-to-Case

Steady State

RthJC

1.0

1.5

S

G

D

P-Channel MOSFET

Ordering Information: Si7159DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

RoHS

COMPLIANT

类似零件编号 - SI7159DN

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI7153DN	590Kb / 13P	P-Channel 30 V (D-S) MOSFET 01-Jan-2022
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More results

类似说明 - SI7159DN

制造商	部件名	数据表	功能描述
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Vishay Siliconix	SI4435DDY-T1-GE3	279Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. C, 18-May-09
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