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SI7149DP 数据表(PDF) 2 Page - Vishay Siliconix |
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SI7149DP 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 13 page www.vishay.com 2 Document Number: 68934 S-82620-Rev. A, 03-Nov-08 Vishay Siliconix Si7149DP New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA - 32 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 6.0 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.2 - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 25 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS ≥ - 10 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 15 A 0.0042 0.0052 Ω VGS = - 4.5 V, ID = - 10 A 0.0075 0.0094 Forward Transconductancea gfs VDS = - 10 V, ID = - 15 A 47 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 4590 pF Output Capacitance Coss 795 Reverse Transfer Capacitance Crss 765 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 10 A 98 147 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A 51 77 Gate-Source Charge Qgs 11.7 Gate-Drain Charge Qgd 25 Gate Resistance Rg f = 1 MHz 0.4 2.0 4.0 Ω Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 15 30 ns Rise Time tr 14 28 Turn-Off DelayTime td(off) 58 110 Fall Time tf 16 32 Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω 79 140 Rise Time tr 135 220 Turn-Off DelayTime td(off) 52 100 Fall Time tf 36 70 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C - 50 A Pulse Diode Forward Current ISM - 70 Body Diode Voltage VSD IS = - 3 A, VGS = 0 V - 0.72 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 49 90 ns Body Diode Reverse Recovery Charge Qrr 47 86 nC Reverse Recovery Fall Time ta 22 ns Reverse Recovery Rise Time tb 27 |
类似零件编号 - SI7149DP |
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类似说明 - SI7149DP |
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