SI5419DU datasheet(2/9 Pages) VISHAY

部件名	SI5419DU

功能描述	P-Channel 30 V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Document Number: 69001

S11-0184-Rev. B, 07-Feb-11

Vishay Siliconix

Si5419DU

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %

a. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 30

V

VDS Temperature Coefficient

V

DS/TJ

ID = - 250 µA

- 20

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

5

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS , ID = - 250 µA

- 1.2

- 2.5

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 30 V, VGS = 0 V

- 1

µA

VDS = - 30 V, VGS = 0 V, TJ = 55 °C

- 5

On-State Drain Currenta

ID(on)

VDS  - 5 V, VGS = - 4.5 V

- 20

A

Drain-Source On-State Resistancea

RDS(on)

VGS - 10 V, ID = - 6.6 A

0.016

0.020



VGS - 4.5 V, ID = - 5.1 A

0.027

0.033

Forward Transconductancea

gfs

VDS = - 10 V, ID = - 6.6 A

20

S

Dynamicb

Input Capacitance

Ciss

VDS = - 15 V, VGS = 0 V, f = 1 MHz

1400

pF

Output Capacitance

Coss

240

Reverse Transfer Capacitance

Crss

200

Total Gate Charge

Qg

VDS = - 15 V, VGS = - 10 V, ID = - 9.9 A

30

45

nC

VDS = - 15 V, VGS = - 4.5 V, ID = - 9.9 A

15.5

24

Gate-Source Charge

Qgs

4.5

Gate-Drain Charge

Qgd

7.5

Gate Resistance

Rg

f = 1 MHz

6.7



Turn-on Delay Time

td(on)

VDD = - 15 V, RL = 1.9 

ID  - 7.9 A, VGEN = - 4.5 V, Rg = 1 

47

70

ns

Rise Time

tr

33

50

Turn-Off Delay Time

td(off)

30

45

Fall Time

tf

16

25

Turn-On Delay Time

td(on)

VDD = - 15 V, RL = 1.9 

ID  - 7.9 A, VGEN = - 10 V, Rg = 1 

10

15

Rise Time

tr

10

15

Turn-Off Delay Time

td(off)

40

60

Fall Time

tf

12

20

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

- 12

A

Pulse Diode Forward Current

ISM

40

Body Diode Voltage

VSD

IS = - 7.9 A, VGS = 0 V

- 0.85

- 1.2

V

Body Diode Reverse Recovery Time

trr

IF = - 7.9 A, dI/dt = 100 A/µs, TJ = 25 °C

25

40

ns

Body Diode Reverse Recovery Charge

Qrr

15

25

nC

Reverse Recovery Fall Time

ta

11

ns

Reverse Recovery Rise Time

tb

14

类似零件编号 - SI5419DU

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI5419DU	140Kb / 9P	P-Channel 30 V (D-S) MOSFET 01-Jan-2022
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