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SS8550W 数据表(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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SS8550W 数据表(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification Silicon Epitaxial Planar Transistor SS8550W F062 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA,IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-40V,IE=0 -0.1 μA Collector cut-off current ICEO VCE=-20V,IB=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-1V,IC=-100mA 120 400 VCE=-1V,IC=-800mA 40 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB= -80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB= -80mA -1.2 V Transition frequency fT VCE=-10V, IC= -50mA f=30MHz 100 MHz Output capacitance Cob VCB=-10V,IE=0,f=1MHz 20 pF Base-emitter voltage VBEF IE=-1.5A -1.6 V CLASSIFICATION OF hFE(1) Rank L H J Range 120-200 200-350 300-400 |
类似零件编号 - SS8550W_14 |
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类似说明 - SS8550W_14 |
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