TC58FVM62A datasheet(7/61 Pages) TOSHIBA

部件名	TC58FVM62A

功能描述	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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TC58FVM6(T/B)2A(FT/XB)65

2003-01-29 7/61

SIMULTANEOUS READ/WRITE OPERATION

The TC58FVM6T2A/B2A features a Simultaneous Read/Write operation. The Simultaneous Read/Write operation

enables the device to simultaneously write data to or erase data from a bank while reading data from another bank.

The TC58FVM6T2A/B2A has a total of four banks (8Mbits: 24Mbits: 24Mbits: 8Mbits). Banks can be switched

between using the bank addresses (A21~A19). For a description of bank blocks and addresses, please refer to the

Block Address Table and Block Size Table.

The Simultaneous Read/Write operation cannot perform multiple operations within a single bank. The table

below shows the operation modes in which simultaneous operation can be performed.

Note that during Auto-Program execution or Auto Block Erase operation, the Simultaneous Read/Write operation

cannot read data from addresses in the same bank which have not been selected for operation. Data from these

addresses can be read using the Program Suspend or Erase Suspend function, however.

SIMULTANEOUS READ/WRITE OPERATION

STATUS OF BANK ON WHICH OPERATION IS BEING

PERFORMED

STATUS OF OTHER BANKS

Read Mode

ID Read Mode

(1)

Auto-Program Mode

Auto-Page Program Mode

Fast Program Mode

(2)

Program Suspend Mode

Auto Block Erase Mode

Auto Multiple Block Erase Mode

(3)

Erase Suspend Mode

Program during Erase Suspend

Program Suspend during Erase Suspend

CFI Mode

Read Mode

(1) Only Command Mode is valid.

(2) Including times when Acceleration Mode is in use.

(3) If the selected blocks are spread across all nine banks, simultaneous operation cannot be carried out.

OPERATION MODES

In addition to the Read, Write and Erase Modes, the TC58FVM6T2A/B2A features many functions including

block protection and data polling. When incorporating the device into a deign, please refer to the timing charts and

flowcharts in combination with the description below.

READ MODE ( PAGE READ )

To read data from the memory cell array, set the device to Read Mode. In Read Mode the device can perform

high-speed random access and Page Read as asynchronous ROM.

The device is automatically set to Read Mode immediately after power-on or on completion of automatic

operation. A software reset releases ID Read Mode and the lock state which the device enters if automatic

operation ends abnormally, and sets the device to Read Mode. A hardware reset terminates operation of the

device and resets it to Read Mode. When reading data without changing the address immediately after

power-on, either input a hardware Reset or change CE from H to L.

类似零件编号 - TC58FVM62A

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	TC58FVM6B2A	531Kb / 62P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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类似说明 - TC58FVM62A

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TC58FVM62A 数据表(PDF) 7 Page - Toshiba Semiconductor

TC58FVM62A 数据表(HTML) 7 Page - Toshiba Semiconductor

类似零件编号 - TC58FVM62A

类似说明 - TC58FVM62A

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TC58FVM62A 数据表(PDF) 7 Page - Toshiba Semiconductor

TC58FVM62A 数据表(HTML) 7 Page - Toshiba Semiconductor

类似零件编号 - TC58FVM62A

类似说明 - TC58FVM62A

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