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TC55VCM216ASTN40 数据表(PDF) 5 Page - Toshiba Semiconductor |
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TC55VCM216ASTN40 数据表(HTML) 5 Page - Toshiba Semiconductor |
5 / 14 page TC55VCM216ASTN40,55 2002-07-04 5/14 AC CHARACTERISTICS AND OPERATING CONDITIONS (Ta ==== −−−−40° to 85°C, VDD ==== 2.7 to 3.6 V) READ CYCLE TC55VCM216ASTN 40 55 SYMBOL PARAMETER MIN MAX MIN MAX UNIT tRC Read Cycle Time 40 55 tACC Address Access Time 40 55 tCO1 Chip Enable( 1 CE ) Access Time 40 55 tCO2 Chip Enable(CE2) Access Time 40 55 tOE Output Enable Access Time 25 30 tBA Data Byte Control Access Time 40 55 tCOE Chip Enable Low to Output Active 5 5 tOEE Output Enable Low to Output Active 0 0 tBE Data Byte Control Low to Output Active 5 5 tOD Chip Enable High to Output High-Z 20 25 tODO Output Enable High to Output High-Z 20 25 tBD Data Byte Control High to Output High-Z 20 25 tOH Output Data Hold Time 10 10 ns WRITE CYCLE TC55VCM216ASTN 40 55 SYMBOL PARAMETER MIN MAX MIN MAX UNIT tWC Write Cycle Time 40 55 tWP Write Pulse Width 30 40 tCW Chip Enable to End of Write 35 45 tBW Data Byte Control to End of Write 35 45 tAS Address Setup Time 0 0 tWR Write Recovery Time 0 0 tODW R/W Low to Output High-Z 20 25 tOEW R/W High to Output Active 0 0 tDS Data Setup Time 20 25 tDH Data Hold Time 0 0 ns Note: tOD, tODO, tBD and tODW are specified in time when an output becomes high impedance, and are not judged depending on an output voltage level. |
类似零件编号 - TC55VCM216ASTN40 |
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类似说明 - TC55VCM216ASTN40 |
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