BUD42D datasheet(5/14 Pages) ONSEMI

部件名	BUD42D

功能描述	High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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BUD42D

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5

TYPICAL SWITCHING CHARACTERISTICS

Figure 11. Capacitance

1000

10

1

100

10

1

VR, REVERSE VOLTAGE (VOLTS)

Figure 12. BVCER = f(RBE)

900

500

300

10000

100

10

RBE (W)

1000

800

600

400

100

Cib

Cob

TJ = 25°C

f(test) = 1 MHz

Figure 13. Resistive Switching, ton

800

300

0

2

1

0

IC, COLLECTOR CURRENT (AMPS)

Figure 14. Resistive Switching, toff

9

3

0

2

0.5

0

IC, COLLECTOR CURRENT (AMPS)

1.5

6

400

500

200

100

TJ = 125°C

TJ = 25°C

hFE = 5

IBon = IBoff

VCC = 300 V

PW = 40 µs

1

TJ = 125°C

TJ = 25°C

IBon = IBoff

VCC = 300 V

PW = 40 µs

Figure 15. Inductive Storage Time,

tsi @ hFE = 5

4

0

IC, COLLECTOR CURRENT (AMPS)

Figure 16. Inductive Storage Time,

tsi @ hFE = 10

4

2

1

0.5

IC, COLLECTOR CURRENT (AMPS)

1.5

3

1

3

2

1

IBon = IBoff

VCE = 15 V

VZ = 300 V

LC = 200 µH

700

600

700

TC = 25°C

0.5

1.5

hFE = 10

0.5

1

1.5

2

TJ = 25°C

TJ = 125°C

IBon = IBoff

VCE = 15 V

VZ = 300 V

LC = 200 µH

TJ = 25°C

TJ = 125°C

ICER = 10 mA

ICER = 100 mA

lC = 25 mH

hFE = 5

hFE = 10

类似零件编号 - BUD42D

制造商	部件名	数据表	功能描述
ON Semiconductor	BUD42D	184Kb / 12P	High Speed, High Gain Bipolar NPN Transistor January, 2011 ??Rev. 5
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	BUD42D	184Kb / 12P	High Speed, High Gain Bipolar NPN Transistor January, 2011 ??Rev. 5

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