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BU323ZG 数据表(PDF) 4 Page - ON Semiconductor |
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BU323ZG 数据表(HTML) 4 Page - ON Semiconductor |
4 / 8 page BU323Z http://onsemi.com 4 Figure 1. IC = f(VCE) Curve Shape IC INOM = 6.5 A Output transistor turns on: IC = 40 mA High Voltage Circuit turns on: IC = 20 mA Avalanche diode turns on: IC = 100 mA Icer Leakage Current 250 V 300 V 340 V VCE VCLAMP NOMINAL = 400 V By design, the BU323Z has a built−in avalanche diode and a special high voltage driving circuit. During an auto−protect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. This prevents the transistor from going into a Reverse Bias Operating limit condition. Therefore, the device will have an extended safe operating area and will always appear to be in “FBSOA.” Because of the built−in zener and associated network, the IC = f(VCE) curve exhibits an unfamiliar shape compared to standard products as shown in Figure 1. Figure 2. Basic Energy Test Circuit MERCURY CONTACTS WETTED RELAY VCE MONITOR (VGATE) L INDUCTANCE (8 mH) IB CURRENT SOURCE VBEoff IB2 SOURCE IC CURRENT SOURCE 0.1 W NON INDUCTIVE IC MONITOR RBE = 100 W The bias parameters, VCLAMP, IB1, VBE(off), IB2, IC, and the inductance, are applied according to the Device Under Test (DUT) specifications. VCE and IC are monitored by the test system while making sure the load line remains within the limits as described in Figure 4. Note: All BU323Z ignition devices are 100% energy tested, per the test circuit and criteria described in Figures 2 and 4, to the minimum guaranteed repetitive energy, as specified in the device parameter section. The device can sustain this energy on a repetitive basis without degrading any of the specified electrical characteristics of the devices. The units under test are kept functional during the complete test sequence for the test conditions described: IC(peak) = 7.0 A, ICH = 5.0 A, ICL = 100 mA, IB = 100 mA, RBE = 100 W, Vgate = 280 V, L = 8.0 mH Figure 3. Forward Bias Safe Operating Area VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 340V 100 10 0.001 0.01 0.1 1 10 TC = 25°C 250ms 10ms 1ms 300 ms THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO |
类似零件编号 - BU323ZG |
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类似说明 - BU323ZG |
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