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BU323Z 数据表(PDF) 5 Page - ON Semiconductor

部件名 BU323Z
功能描述  NPN Silicon Power Darlington
Download  8 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

BU323Z 数据表(HTML) 5 Page - ON Semiconductor

  BU323Z Datasheet HTML 1Page - ON Semiconductor BU323Z Datasheet HTML 2Page - ON Semiconductor BU323Z Datasheet HTML 3Page - ON Semiconductor BU323Z Datasheet HTML 4Page - ON Semiconductor BU323Z Datasheet HTML 5Page - ON Semiconductor BU323Z Datasheet HTML 6Page - ON Semiconductor BU323Z Datasheet HTML 7Page - ON Semiconductor BU323Z Datasheet HTML 8Page - ON Semiconductor  
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BU323Z
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5
Figure 4. Energy Test Criteria for BU323Z
The shaded area represents the amount of energy the
device can sustain, under given DC biases (IC/IB/VBE(off)/
RBE), without an external clamp; see the test schematic dia-
gram, Figure 2.
The transistor PASSES the Energy test if, for the inductive
load and ICPEAK/IB/VBE(off) biases, the VCE remains outside
the shaded area and greater than the VGATE minimum limit,
Figure 4a.
The transistor FAILS if the VCE is less than the VGATE
(minimum limit) at any point along the VCE/IC curve as
shown on Figures 4b, and 4c. This assures that hot spots and
uncontrolled avalanche are not being generated in the die,
and the transistor is not damaged, thus enabling the sustained
energy level required.
The transistor FAILS if its Collector/Emitter breakdown
voltage is less than the VGATE value, Figure 4d.
ICPEAK
(a)
IC
IC HIGH
IC LOW
VCE
VGATE MIN
ICPEAK
IC
IC HIGH
IC LOW
VCE
VGATE MIN
(b)
ICPEAK
IC
IC HIGH
IC LOW
VCE
VGATE MIN
(c)
ICPEAK
IC
IC HIGH
IC LOW
VCE
VGATE MIN
(d)


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