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SUM110N03 Datasheet(数据表) 2 Page - Vishay Siliconix

部件型号  SUM110N03
说明  N-Channel 30-V (D-S) 175C MOSFET
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
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SUM110N03 Datasheet(HTML) 2 Page - Vishay Siliconix

   
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SUM110N03-03
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72260
S-31257—Rev. A, 16-Jun-03
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VDS = 0 V, ID = 250 mA
30
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
2.5
4.5
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
VDS = 24 V, VGS = 0 V
1
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V, TJ = 125_C
50
mA
g
DSS
VDS = 24 V, VGS = 0 V, TJ = 175_C
250
m
On-State Drain Currenta
ID(on)
VDS w 5 V, VGS = 10 V
120
A
VGS = 10 V, ID = 30 A
0.002
0.0025
Drain-Source On-State Resistancea
rDS(on)
VGS = 10 V, ID = 30 A, TJ = 125_C
0.0037
W
DS(on)
VGS = 10 V, ID = 30 A, TJ = 175_C
0.0044
Forward Transconductancea
gfs
VDS = 15 V, ID = 30 A
15
S
Dynamicb
Input Capacitance
Ciss
12500
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
1650
pF
Reverse Transfer Capacitance
Crss
970
Total Gate Chargeb
Qg
170
250
Gate-Source Chargeb
Qgs
VDS = 15 V, VGS = 10 V, ID = 110 A
57
nC
Gate-Drain Chargeb
Qgd
DS
,
GS
, D
30
Turn-On Delay Timeb
td(on)
20
35
Rise Timeb
tr
VDD = 15 V, RL = 0.18 W
125
190
ns
Turn-Off Delay Timeb
td(off)
VDD = 15 V, RL = 0.18 W
ID ^ 110 A, VGEN = 10 V, RG = 2.5 W
70
105
ns
Fall Timeb
tf
25
40
Source-Drain Diode Ratings and Characteristics (TC = 25_C)c
Continuous Current
IS
110
A
Pulsed Current
ISM
350
A
Forward Voltagea
VSD
IF = 50 A, VGS = 0 V
0.9
1.5
V
Reverse Recovery Time
trr
70
140
ns
Peak Reverse Recovery Current
IRM
IF = 50 A, di/dt = 100 A/ms
3
4.5
A
Reverse Recovery Charge
Qrr
F
m
0.1
0.31
mC
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Independent of operating temperature.
c.
Guaranteed by design, not subject to production testing.




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