EMH3 / UMH3N / IMH3A

Transistors

Absolute maximum ratings

(Ta = 25°C)

Parameter

Symbol

Limits

Unit

50

V

50

V

5V

100

mA

Tj

150

°C

Tstg

−55~+150

°C

Pc

EMH3,UMH3N

150 (TOTAL)

mW

IMH3A

300 (TOTAL)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Junction temperature

Storage temperature

Collector

power

dissipation

Electrical characteristics

(Ta = 25°C)

Parameter

Symbol

Min.

50

50

5

−

−

100

−

3.29

−

−

−

−

−

250

−

4.7

−

−

−

0.5

0.5

600

0.3

6.11

µA

µA

−

V

V

µA

µA

−

V

k

Ω

Typ.

Max.

Unit

Conditions

−

250

−

−5mA, f=100MHz

∗

MHz

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Transition frequency

Collector-emitter saturation voltage

Input resistance

Electrical characteristic curves

(A)

5V

100

µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m

1k

500

200

100

50

20

10

5

2

1

Ta=100

°C

25

°C

−40°C

Fig.1 DC current gain vs. collector

current

100

µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m

1

500m

200m

100m

50m

20m

10m

5m

2m

1m

(A)

Ta=100

°C

25

°C

−40°C

Fig.2 Collector-emitter saturation

voltage vs. collector current

Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747

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