MTB9DP03V8-0-T6-G datasheet(6/9 Pages) CYSTEKEC

部件名	MTB9DP03V8-0-T6-G

功能描述	P-Channel Enhancement Mode Power MOSFET

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制造商	CYSTEKEC [Cystech Electonics Corp.]

网页	http://www.cystekec.com

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6 / 9 page

CYStech Electronics Corp.

Spec. No. : C050V8

Issued Date : 2017.01.24

Revised Date :

Page No. : 6/9

MTB9D0P03V8

CYStek Product Specification

Typical Characteristics(Cont.)

Single Pulse Maximum Power Dissipation

0

50

100

150

200

250

300

0.0001 0.001

0.01

0.1

1

10

100

1000

Pulse Width(s)

TJ(MAX)=150°C

TA=25°C

RθJA=50°C/W

Typical Transfer Characteristics

0

10

20

30

40

50

60

70

80

90

100

01

2

34

56

-VGS, Gate-Source Voltage(V)

VDS=-10V

Transient Thermal Response Curves

0.001

0.01

0.1

1

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

t1, Square Wave Pulse Duration(s)

Single Pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

1.RθJA(t)=r(t)*RθJA

2.Duty Factor, D=t1/t2

3.TJM-TA=PDM*RθJA(t)

4.RθJA=50°C/W

类似零件编号 - MTB9DP03V8-0-T6-G

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类似说明 - MTB9DP03V8-0-T6-G

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