数据搜索系统,热门电子元器件搜索 |
|
BCP68T1G 数据表(PDF) 3 Page - ON Semiconductor |
|
BCP68T1G 数据表(HTML) 3 Page - ON Semiconductor |
3 / 5 page BCP68T1G http://onsemi.com 3 TYPICAL ELECTRICAL CHARACTERISTICS 1.0 1000 100 10 IC, COLLECTOR CURRENT (mA) Figure 3. “On” Voltage 0.8 0.6 0.4 0.2 0 1.0 TJ = 25°C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1.0 V VCE(sat) @ IC/IB = 10 80 VR, REVERSE VOLTAGE (V) Figure 4. Capacitance 0 70 60 50 40 30 1.0 2.0 3.0 4.0 TJ = 25°C VR, REVERSE VOLTAGE (V) Figure 5. Capacitance 0 5.0 10 15 20 TJ = 25°C 25 20 15 10 5.0 1000 IC, COLLECTOR CURRENT (mA) Figure 6. Base−Emitter Temperature Coefficient -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 100 10 1.0 1.0 0.8 0.6 0.4 0.2 0 100 IB, BASE CURRENT (mA) 10 1.0 0.1 0.01 TJ = 25°C I C = 10 mA = 100 mA = 500 mA 5.0 RqVB for VBE = 50 mA Figure 7. Saturation Region = 1000 mA 1 10 1 0.1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 8. Safe Operating Area 100 ms 10 ms 1 ms |
类似零件编号 - BCP68T1G_14 |
|
类似说明 - BCP68T1G_14 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |