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TIP48G 数据表(PDF) 4 Page - ON Semiconductor |
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TIP48G 数据表(HTML) 4 Page - ON Semiconductor |
4 / 6 page TIP47G, TIP48G, TIP50G www.onsemi.com 4 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 20 5.0 50 500 Figure 5. Active Region Safe Operating Area 0.02 0.05 SECONDARY BREAKDOWN LIMITED THERMALLY LIMITED @ 25 °C BONDING WIRE LIMITED 1.0ms dc 100 ms 0.2 0.1 5.0 2.0 CURVES APPLY BELOW RATED VCEO 1.0 0.5 100 200 500 ms TC ≤ 25°C TIP47 TIP48 TIP50 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.05 0.1 0.2 0.02 0.5 IC, COLLECTOR CURRENT (AMPS) Figure 6. Turn−Off Time 5.0 2.0 1.0 0.5 0.2 0.1 0.05 1.0 2.0 ts TJ = 25°C VCC = 200 V IC/IB = 5.0 tf IC, COLLECTOR CURRENT (AMPS) +4.5 +3.5 +2.5 +1.5 0 -0.5 -1.5 -2.5 *APPLIES FOR IC/IB ≤ hFE/5 qVC FOR VCE(sat) qVB FOR VBE Figure 7. Temperature Coefficients 0.02 0.05 0.1 0.2 0.5 1.0 2.0 +25 °C to +150°C -55 °C to +25°C +25 °C to +150°C -55 °C to +25°C +0.5 Figure 8. Inductive Load Switching Note A: Input pulse width is increased until ICM = 0.63 A. INPUT 50 MJE171 RBB1 = 150 W 100 mH RBB2 = 100 W VBB2 = 0 VBB1 = 10 V VCE MONITOR TUT VCC = 20 V IC MONITOR RS = 0.1 W 50 0.63 A 0 V -5 V tw ≈ 3 ms (SEE NOTE A) INPUT VOLTAGE COLLECTOR CURRENT COLLECTOR VOLTAGE VCER 0 V 10 V 100 ms VCE(sat) |
类似零件编号 - TIP48G |
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类似说明 - TIP48G |
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