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BC807-40WT3G 数据表(PDF) 2 Page - ON Semiconductor

部件名 BC807-40WT3G
功能描述  General Purpose Transistors
Download  8 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

BC807-40WT3G 数据表(HTML) 2 Page - ON Semiconductor

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BC807−25W, BC807−40W
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = −10 mA)
V(BR)CEO
−45
V
Collector − Emitter Breakdown Voltage
(VEB = 0, IC = −10 mA)
V(BR)CES
−50
V
Emitter − Base Breakdown Voltage
(IE = −1.0 mA)
V(BR)EBO
−5.0
V
Collector Cutoff Current
(VCB = −20 V)
(VCB = −20 V, TJ = 150°C)
ICBO
−100
−5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mA, VCE = −1.0 V)
BC807−25, SBC807−25
BC807−40, SBC807−40
(IC = −500 mA, VCE = −1.0 V)
hFE
160
250
40
400
600
Collector − Emitter Saturation Voltage
(IC = −500 mA, IB = −50 mA)
VCE(sat)
−0.7
V
Base − Emitter On Voltage
(IC = −500 mA, VCE = −1.0 V)
VBE(on)
−1.2
V
SMALL−SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
fT
100
MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Cobo
10
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
Specific Marking
Package
Shipping
BC807−25WT1G
5B
SC−70
(Pb−Free)
3000 / Tape & Reel
SBC807−25T1G*
BC807−25WT3G
10,000 / Tape & Reel
BC807−40WT1G
5C
SC−70
(Pb−Free)
3000 / Tape & Reel
SBC807−40WT1G*
BC807−40WT3G
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.


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