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IRL3303S 数据表(PDF) 2 Page - International Rectifier |
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IRL3303S 数据表(HTML) 2 Page - International Rectifier |
2 / 10 page IRL3303S/L Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.026 VGS = 10V, ID = 20A ––– ––– 0.040 Ω VGS = 4.5V, ID = 17A TJ = 150°C VGS(th) Gate Threshold Voltage 1.0 ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 12 ––– ––– S VDS = 25V, ID = 20A ––– ––– 25 µA VDS = 30V, VGS = 0V ––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -16V Qg Total Gate Charge ––– ––– 26 ID = 20A Qgs Gate-to-Source Charge ––– ––– 8.8 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 15 VGS = 4.5V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 7.4 ––– VDD = 15V tr Rise Time ––– 200 ––– ID = 20A td(off) Turn-Off Delay Time ––– 14 ––– RG = 6.5 Ω tf Fall Time ––– 36 ––– RD = 0.7 Ω, See Fig. 10
Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 870 ––– VGS = 0V Coss Output Capacitance ––– 340 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) Static Drain-to-Source On-Resistance IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance 7.5 nH Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 20A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: V DD = 15V, starting TJ = 25°C, L = 470µH RG = 25Ω, IAS = 20A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
Uses IRL3303 data and test conditions. Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 20A, VGS = 0V trr Reverse Recovery Time ––– 72 110 ns TJ = 25°C, IF = 20A Qrr Reverse Recovery Charge ––– 180 280 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A 38 140 S D G |
类似零件编号 - IRL3303S |
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类似说明 - IRL3303S |
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