InGaAs Photodetector

PRELIMINARY

SD012-151-011

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Precision – Control – Results

Information in this technical datasheet is believed to

be correct and reliable. However, no responsibility is

assumed for possible inaccuracies or omission.

Specifications are subject to change without notice.

Page 2/2

REV 01-04-16

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Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935

OPTO-ELECTRICAL PARAMETERS

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Breakdown Voltage

-

50

-

V

Responsivity

0.80

0.90

-

A/W

Shunt Resistance

0.2

1.0

-

G

Ω

Dark Current

-

0.1

10.0

nA

Capacitance

-

2.0

10.0

pF

Rise Time (50

Ω load)

-

1.2

-

ns

Spectral Range

800

-

1700

nm

Noise Equivalent Power

Vr= 5V@

λ=1310

-

4.0x10

-15

-

W/Hz

1/2

TYPICAL PERFORMANCE

NOISE CURRENT vs. REVERSE BIAS

DARK CURRENT vs REVERSE BIAS

SPECTRAL RESPONSE

DARK CURRENT vs REVERSE BIAS

1.E-15

1.E-14

1.E-13

1.E-12

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

Reverse Voltage (V)

Noise current @ 23C

1.E-13

1.E-11

1.E-09

1.E-07

1.E-05

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

Reverse Voltage [V]

Reverse dark current @ 23 C

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

600

800

1000

1200

1400

1600

1800

Wavelength [nm]

Typical Responsivity

5

7

9

11

13

15

17

19

21

23

0

5

10

15

20

Reverse Bias [V]

Typical Capacitance at 1 MHz