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BAP51-02 数据表(PDF) 4 Page - NXP Semiconductors |
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BAP51-02 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 6 page 1999 Jun 28 4 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 GRAPHICAL DATA Fig.2 Forward resistance as a function of the forward current; typical values. f = 100 MHz; Tj =25 °C. handbook, halfpage MGS322 10 2 5 1 10−1 110 IF (mA) r D ( Ω) Fig.3 Diode capacitance as a function of reverse voltage; typical values. f= 1MHz; Tj =25 °C. handbook, halfpage 020 VR (V) Cd (fF) 500 0 100 MGS323 200 300 400 4 8 12 16 -2.5 -2 -1.5 -1 -0.5 0 0.511.5 22.5 3 f (GHz) |S21| 2 (dB) (1) (2) (3) Fig.4 Insertion loss ( |S21|2) of the diode as a function of frequency; typical values. (1) IF = 10 mA.; (2) IF = 1 mA.; (3) IF =0.5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb =25 °C. Fig.5 Isolation ( |S21|2) of the diode as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb =25 °C. -25 -20 -15 -10 -5 0 0.5 1 1.5 2 2.5 3 f (GHz) |S21| 2 (dB) |
类似零件编号 - BAP51-02_99 |
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类似说明 - BAP51-02_99 |
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