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TPC8005-H 数据表(PDF) 1 Page - Toshiba Semiconductor |
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TPC8005-H 数据表(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPC8005-H 2002-02-06 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High Speed U−MOS) TPC8005−H High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package High speed switching : 60% speed up (compare with current type) Small gate charge : Qg = 20 nC (typ.) Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) High forward transfer admittance : |Yfs| = 16 S (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) Enhancement−mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 11 Drain current Pulse (Note 1) IDP 44 A Drain power dissipation (t = 10 s) (Note 2a) PD 2.4 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single pulse avalanche energy (Note 3) EAS 157 mJ Avalanche current IAR 11 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.24 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration |
类似零件编号 - TPC8005-H |
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类似说明 - TPC8005-H |
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