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2SAR522EB 数据表(PDF) 2 Page - Rohm |
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2SAR522EB 数据表(HTML) 2 Page - Rohm |
2 / 12 page 2SAR522M / 2SAR522EB / 2SAR522UB Datasheet l lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current IC -200 mA ICP*1 -400 mA Power dissipation 2SAR522M PD*2 150 mW 2SAR522EB 150 2SAR522UB 200 Junction temperature Tj 150 ℃ Range of storage temperature Tstg -55 to +150 ℃ l lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = -50μA -20 - - V Collector-emitter breakdown voltage BVCEO IC = -1mA -20 - - V Emitter-base breakdown voltage BVEBO IE = -50μA -5 - - V Collector cut-off current ICBO VCB = -20V - - -100 nA Emitter cut-off current IEBO VEB = -5V - - -100 nA Collector-emitter saturation voltage VCE(sat) IC = -100mA, IB = -10mA - -120 -300 mV DC current gain hFE VCE = -2V, IC = -1mA 120 - 560 - Transition frequency fT VCE = -10V, IE = 10mA, f = 100MHz - 350 - MHz Output capacitance Cob VCB = -10V, IE = 0A, f = 1MHz - 3.0 - pF *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/8 20151127 - Rev.002 |
类似零件编号 - 2SAR522EB_15 |
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类似说明 - 2SAR522EB_15 |
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