BCW68G datasheet(2/3 Pages) YEASHIN

部件名	BCW68G

功能描述	General Purpose Transistors

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制造商	YEASHIN [Yea Shin Technology Co., Ltd]

网页	http://www.yeashin.com

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REV.02 20120705

BCW68G

DEVICE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

hFE

—

( IC= –10 mAdc, VCE = –1.0 Vdc )

120

—

400

( IC= –100 mAdc, VCE = –1.0 Vdc )

160

—

( IC= –300 mAdc, VCE = –1.0 Vdc )

60

—

Collector–Emitter Saturation Voltage

V CE(sat)

—

– 1.5

Vdc

( IC = – 300 mAdc, IB = –30 mAdc )

Base–Emitter Saturation Voltage

V BE(sat)

—

– 2.0

Vdc

( IC = – 500 mAdc, IB = –50 mAdc )

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

f T

100

—

MHz

(I C = –20mAdc, V CE = –10 Vdc, f = 100 MHz)

Output Capacitance

C obo

—

18

pF

(V CB = – 10 Vdc, I E = 0, f = 1.0 MHz)

Input Capacitance

C ibo

—

105

pF

(V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz)

Noise Figure

NF

—

10

dB

(V CE= – 5.0 Vdc, I C = – 0.2 mAdc, RS = 1.0 k

Ω, f = 1.0 kHz, BW = 200 Hz)

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