MG1200V1US51 datasheet(2/4 Pages) TOSHIBA

部件名	MG1200V1US51

功能描述	TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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MG1200V1US51

2001-06-26

2

ELECTRICAL CHARACTERISTICS (Tc = 125°C : except thermal resistance)

CHARACTERISTICS

SYMBOL

TEST CONDITION

MIN

TYP.

MAX

UNIT

Gate Laekage Current

IGES

VGE = ±20 V, VCE = 0 V

―

±50

nA

Collector Cut−Off Current

ICES

VCE = 1700 V, VGE = 0 V

―

100

mA

Gate−Emitter Cut−Off Voltage

VGE (off)

VCE = 5 V, IC = 1.2 A

3.0

―

7.0

V

Collecter−Emitter Saturation Voltage

VCE (sat)

VGE = 15 V, IC = 1200 A

―

5.0

V

Input Capacitance

Cies

VCE = 10 V, VGE = 0 V,

f = 300 kHz

―

130

―

nF

Rise Time

tr

―

0.7

µs

Turn−On Time

ton

―

1.0

µs

Fall Time

tf

―

0.8

µs

Switching Time

(Note 1)

Turn−Off Time

toff

VCC = 900 V, IC = 1200 A

VGE = ±15 V, RG = 1.8 Ω

(Inductive load: Ls = 150 nH)

―

1.5

µs

Forward Voltage

VF

IF = 1200 A, VGE = 0 V

―

3.2

V

Reverse Recovery Time

(Note 1)

trr

IF = 1200 A, VGE = 15 V

di/dt = 4000 A/µs, VCC = 900 V

―

0.8

µs

Turn−On Loss

Eon

―

250

―

mJ

Turn−Off Loss

Eoff

VCC = 900 V, IC = 1200 A

VGE = ±15 V, RG = 1.8 Ω

―

500

―

mJ

Switching

Dissipation

(Note 1)

Diode Loss

Edsw

IF = 1200 A, VGE = −15 V

di/dt = 4000 A/µs, VCC = 900 V

―

300

―

mJ

―

0.018

°C/W

Thermal Resistance

Rth (j−c)

Transistor (IGBT) Stage

Diode Stage

―

0.035

°C/W

Note 1: Test circuit and timing chart of switching time, reverse recovery time and switching dissipation.

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MG1200V1US51 数据表(PDF) 2 Page - Toshiba Semiconductor

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MG1200V1US51 数据表(PDF) 2 Page - Toshiba Semiconductor

MG1200V1US51 数据表(HTML) 2 Page - Toshiba Semiconductor

类似零件编号 - MG1200V1US51

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