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KM6164000BLTI-10L 数据表(PDF) 2 Page - Samsung semiconductor |
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KM6164000BLTI-10L 数据表(HTML) 2 Page - Samsung semiconductor |
2 / 9 page KM6164000B Family CMOS SRAM Revision 4.01 June 1998 2 256Kx16 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The KM616V4000B families are fabricated by SAMSUNG ′s advanced CMOS process technology. The families support various operating temperature ranges and small package types for user flexibility of system design. The families also support low data retention voltage for battery back-up opera- tion with low data retention current. FEATURES • Process Technology : TFT • Organization : 256Kx16 • Power Supply Voltage : 4.5~5.5V • Low Data Retention Voltage : 2V(Min) • Three state output and TTL Compatible • Package Type : 44-TSOP2-400F/R PIN DESCRIPTION Name Function Name Function CS Chip Select Input Vcc Power OE Output Enable Input Vss Ground WE Write Enable Input UB Upper Byte(I/O9~16) A0~A17 Address Inputs LB Lower Byte (I/O1~8) I/O1~I/O16 Data Inputs/Outputs N.C No Connection PRODUCT FAMILY 1. The parameter is measured with 50pF test load. Product Family Operating Temperature Vcc Range Speed(ns) Power Dissipation PKG Type Standby (ISB1, Max) Operating (ICC2, Max) KM6164000BL-L Commercial(0~70 °C) 4.5~5.5V 551)/70 20 µA 130mA 44-TSOP2-F/R KM6164000BLI-L Industrial(-40~85 °C) 4.5~5.5V 70/100 50 µA FUNCTIONAL BLOCK DIAGRAM SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. A4 A3 A2 A1 A0 CS I/OI I/O2 I/O3 I/O4 Vcc Vss I/O5 I/O6 I/O7 I/O8 WE A17 A16 A15 A14 A5 A6 A7 OE UB LB I/O16 I/O15 I/O14 I/O13 Vss Vcc I/O12 I/O11 I/O10 I/O9 N.C A8 A9 A10 44-TSOP2 Forward 44-TSOP2 Reverse 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 A5 A6 A7 OE UB LB I/O16 I/O15 I/O14 I/O13 Vss Vcc I/O12 I/O11 I/O10 I/O9 N.C A8 A9 A10 A11 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 A13 A12 A11 A12 A4 A3 A2 A1 A0 CS I/OI I/O2 I/O3 I/O4 Vcc Vss I/O5 I/O6 I/O7 I/O8 WE A17 A16 A15 A14 A13 Clk gen. Row select A8 A9 A10 A5 A6 A4 A7 A13 A14 A0 A1 A15 A16 A17 A2 I/O1~I/O8 A3 Data cont Data cont Data cont I/O9~I/O16 Vcc Vss A4 A12 Precharge circuit. Memory array 1024 rows 256 ×16 columns I/O Circuit Column select WE OE UB CS LB Control logic |
类似零件编号 - KM6164000BLTI-10L |
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类似说明 - KM6164000BLTI-10L |
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