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2SD1373 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1373 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD1373 DESCRIPTION · High Collector-Base Voltage- : VCBO= 300V(Min.) · Good Linearity of hFE · High Speed Switching · Wide Area of Safe Operation · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in high-voltage,high-speed,power switching regulators and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4.0 A ICM Collector Current-Peak 6.0 A IB Base Current 1.0 A PC Collector Power Dissipation@TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ |
类似零件编号 - 2SD1373 |
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类似说明 - 2SD1373 |
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