GT15J321 datasheet(5/7 Pages) TOSHIBA

部件名	GT15J321

功能描述	High Power Switching Applications Fast Switching Applications

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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5 / 7 page

GT15J321

2002-01-18

5

Collector-emitter voltage VCE (V)

C – VCE

Gate charge QG (nC)

VCE, VGE – QG

Forward voltage VF (V)

IF − VF

Forward current IF (A)

trr, Irr − IF

Collector-emitter voltage VCE (V)

Safe operating area

Collector-emitter voltage VCE (V)

Reverse bias SOA

1

10

30

100

300

1000

3

1000

300

100

3

10

30

3000

Common emitter

VGE = 0

f

= 1 MHz

Tc

= 25°C

Cres

Coes

Cies

Common emitter

RL = 20 Ω

Tc

= 25°C

0

20

60

80

120

0

4

8

12

16

20

100

200

300

400

500

300

200

40

100

VCE = 100 V

0

0.4

0.8

1.2

2.0

5

10

20

25

30

1.6

15

Common collector

VGE = 0

Tc

= 125°C

25

−40

0

3

6

9

12

15

10

1

100

10

1000

Irr

trr

Common collector

di/dt

= −100 A/µs

VGE = 0

: Tc

= 25°C

: Tc

= 125°C

3

30

300

1

3

10

0.3

0.5

0.1

3

5

1

30

50

10

30

100

300

1000

Tj <= 125°C

VGE = 15 V

RG = 43 Ω

1

3

10

0.3

0.5

0.1

3

5

1

30

50

10

30

100

300

1000

*:Single

nonrepetitive pulse

Tc

= 25°C

Curves must be derated

linearly with increase in

temperature.

IC max (pulsed)*

IC max (continuous)

DC operation

1 ms*

100

µs*

50

µs*

10 ms*

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