September 2001

©2001 Fairchild Semiconductor Corporation

FDC6420C Rev C(W)

FDC6420C

20V N & P-Channel PowerTrench

®

General Description

These N & P-Channel MOSFETs are produced using

Fairchild Semiconductor’s advanced PowerTrench

process that has been especially tailored to minimize

on-state

resistance

and

yet

maintain

superior

switching performance.

These

devices

have

been

designed

to

offer

exceptional power dissipation in a very small footprint

for applications where the bigger more expensive

SO-8 and TSSOP-8 packages are impractical.

Applications

•

DC/DC converter

•

Load switch

•

LCD display inverter

Features

• Q1 3.0 A, 20V. R

Ω @ V

Ω @ V

• Q2 –2.2 A, 20V. R

Ω @ V

Ω @ V

• Low gate charge

• High performance trench technology for extremely

• SuperSOT –6 package: small footprint (72% smaller than

SO-8); low profile (1mm thick).

D1

S2

G1

D2

S1

G2

SuperSOT

-6

TM

Pin 1

SuperSOT™-6

3

2

1

4

5

6

Q1(N)

Q2(P)

Absolute Maximum Ratings

Symbol

Parameter

Q1

Q2

Units

Drain-Source Voltage

20

–20

V

Gate-Source Voltage

±12

±12

V

Drain Current

– Continuous

(Note 1a)

3.0

–2.2

A

– Pulsed

12

–6

Power Dissipation for Single Operation

(Note 1a)

0.96

(Note 1b)

0.9

(Note 1c)

0.7

W

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

130

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

60

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.420

FDC6420C

7’’

8mm

3000 units