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LM359M 数据表(PDF) 3 Page - National Semiconductor (TI) |
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LM359M 数据表(HTML) 3 Page - National Semiconductor (TI) |
3 / 24 page Electrical Characteristics (Continued) I SET(IN) = ISET(OUT) = 0.5 mA, Vsupply = 12V, TA = 25˚C unless otherwise noted Parameter Conditions LM359 Units Min Typ Max Output Currents Source I IN(−) and IIN(+) Grounded, RL = 100Ω 16 40 mA Sink (Linear Region) V comp−0.5V = VOUT = 1V, IIN(+) = 0 4.7 mA Sink (Overdriven) I IN(−) = 100 µA, IIN(+) = 0, 1.5 3 mA V OUT Force = 1V Supply Current Non-Inverting Input 18.5 22 mA Grounded, R L = ∞ Power Supply Rejection f = 120 Hz, I IN(+) Grounded 40 50 dB (Note 4) Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Note 2: See Maximum Power Dissipation graph. Note 3: Mirror gain is the current gain of the current mirror which is used as the non-inverting input. ∆Mirror Gain is the % change in AI for two different mirror currents at any given temperature. Note 4: See Supply Rejection graphs. www.national.com 3 |
类似零件编号 - LM359M |
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类似说明 - LM359M |
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