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CSD18514Q5A 数据表(PDF) 3 Page - Texas Instruments |
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CSD18514Q5A 数据表(HTML) 3 Page - Texas Instruments |
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3 / 13 page  3 CSD18514Q5A www.ti.com SLPS625 – NOVEMBER 2016 Product Folder Links: CSD18514Q5A Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 40 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = 32 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.5 1.8 2.4 V RDS(on) Drain-to-source on resistance VGS = 4.5 V, ID = 14 A 6.0 7.9 m Ω VGS = 10 V, ID = 14 A 4.1 4.9 gfs Transconductance VDS = 4 V, ID = 14 A 59 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0 V, VDS = 20 V, ƒ = 1 MHz 2060 2680 pF Coss Output capacitance 205 267 pF Crss Reverse transfer capacitance 106 138 pF RG Series gate resistance 1.3 2.6 Ω Qg Gate charge total (4.5 V) VDS = 20 V, ID = 14 A 15 20 nC Qg Gate charge total (10 V) 31 40 nC Qgd Gate charge gate-to-drain 5.4 nC Qgs Gate charge gate-to-source 6.7 nC Qg(th) Gate charge at Vth 3.5 nC Qoss Output charge VDS = 20 V, VGS = 0 V 9.4 nC td(on) Turnon delay time VDS = 20 V, VGS = 10 V, IDS = 14 A, RG = 0 Ω 13 ns tr Rise time 22 ns td(off) Turnoff delay time 14 ns tf Fall time 6 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 14 A, VGS = 0 V 0.8 1.0 V Qrr Reverse recovery charge VDS= 20 V, IF = 14 A, di/dt = 300 A/μs 10.5 nC trr Reverse recovery time 14 ns (1) RθJC is determined with the device mounted on a 1-in 2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case thermal resistance(1) 1.7 °C/W RθJA Junction-to-ambient thermal resistance(1)(2) 50 |
类似零件编号 - CSD18514Q5A |
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类似说明 - CSD18514Q5A |
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