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CSD18543Q3A 数据表(PDF) 6 Page - Texas Instruments |
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CSD18543Q3A 数据表(HTML) 6 Page - Texas Instruments |
6 / 13 page TC - Case Temperature (°C) -50 -25 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 D012 VDS - Drain-To-Source Voltage (V) 0.1 1 10 100 0.1 1 10 100 1000 D010 DC 10 ms 1 ms 100 µs TAV - Time in Avalanche (ms) 0.01 0.1 1 1 10 100 D011 TC = 25q C TC = 125q C TC - Case Temperature (qC) -75 -50 -25 0 25 50 75 100 125 150 175 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 D008 VGS = 4.5 V VGS = 10 V VSD - Source-To-Drain Voltage (V) 0 0.2 0.4 0.6 0.8 1 0.0001 0.001 0.01 0.1 1 10 100 D009 TC = 25qC TC = 125qC 6 CSD18543Q3A SLPS633 – DECEMBER 2016 www.ti.com Product Folder Links: CSD18543Q3A Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise stated) ID = 12 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage Single pulse, max RθJC = 1.9°C/W Figure 10. Maximum Safe Operating Area (SOA) Figure 11. Single Pulse Unclamped Inductive Switching Max RθJC = 1.9°C/W Figure 12. Maximum Drain Current vs Temperature |
类似零件编号 - CSD18543Q3A |
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类似说明 - CSD18543Q3A |
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